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學(xué)習(xí)啦>學(xué)習(xí)英語(yǔ)>專業(yè)英語(yǔ)>計(jì)算機(jī)英語(yǔ)> SRAM的中文解釋

SRAM的中文解釋

時(shí)間: 澤燕681 分享

SRAM的中文解釋

  你知道SRAM的中文解釋嗎?一起來(lái)學(xué)習(xí)吧!

  SRAM的中文解釋: static random access memory 靜態(tài)存儲(chǔ)器;

  SRAM的中文解釋例句:

  1. SRAM FPGA system soft simulation designed to realize bitwise write bitwise Reading.

  FPGA系統(tǒng)的sram的軟仿真設(shè)計(jì),可以實(shí)現(xiàn)按位寫,按位讀.

  2. Problem: density memory beyond SRAM is needed in today's devices.

  問(wèn)題: 現(xiàn)今的設(shè)計(jì)需要優(yōu)于SRAM的高密度內(nèi)存.

  3. Presents a circuit of FIFO involving single port SRAM.

  提出了一種基于單端口SRAM的 FIFO電路.

  4. SRAM provides inexpensive storage for temporary data.

  SRAM為臨時(shí)數(shù)據(jù)提供廉價(jià)存儲(chǔ).

  5. SRAM configuration data storage modules using such devices.

  SRAM的配置數(shù)據(jù)存儲(chǔ)單元使用這種設(shè)備.

  6. ATD made the asynchronous use of SRAM.

  地址探測(cè)技術(shù)的采用保證SRAM的異步應(yīng)用.

  7. As the cache memory of ULSI and CPU , SRAM occupies a significant the chip area.

  SRAM作為 巨規(guī)模集成電路以及微處理器中的高速緩沖存儲(chǔ)器, 占據(jù)了大量芯片面積,一般采用最小線寬以限制其面積.

  8. But while promoted as universal memory density of MRAM doesn't approach that of DRAM or SRAM.

  但如果將它作為通用存儲(chǔ)器進(jìn)行推銷,那它的集成度還達(dá)不到DRAM或SRAM的 水平.

  9. Technology for design and implementation of a programmable embedded asynchronous SRAM controller is presented.

  介紹了一種可編程嵌入式異步SRAM存儲(chǔ)控制器的設(shè)計(jì)與實(shí)現(xiàn)方法.

  10. SRAM devices of ALTERA PLD technology is widely used special allocation of more expensive devices.

  SRAM的器件Altera的可編程邏輯器件技術(shù)的廣泛使用的特別撥款,更昂貴的設(shè)備.

  11. Single event multiple upset ( SEMU ) experimental results of high - density static random access memory ( SRAM ) are presented.

  給出典型大容量靜態(tài)存儲(chǔ)器 ( SRAM ) 的多位翻轉(zhuǎn)實(shí)驗(yàn)研究結(jié)果.

  12. SRAM short time, the dynamic changes to the system created conditions PLD logic function.

  SRAM的時(shí)間短, 動(dòng)態(tài)變化的系統(tǒng)創(chuàng)造了條件可編程邏輯器件的邏輯功能.

  13. Data stored in an SRAM is lost when the system is powered down or reset.

  當(dāng)系統(tǒng)斷電或重啟時(shí),保存在SRAM中的內(nèi)容將丟失.

  14. The SRAM cell illustrated Kuhn's point as she showed the evolution from 90 - nm to 45 - nm design.

  Kuhn出示的90nm到45nm的SRAM單元設(shè)計(jì)闡明了這點(diǎn).

  15. Finally, a review & summarize above works, and anticipants to the developments of SRAM technology.

  最后, 論文結(jié)合深亞微米高速低功耗SRAM的 設(shè)計(jì)工作,進(jìn)行了總結(jié), 并對(duì)SRAM技術(shù) 的發(fā)展進(jìn)行了展望.

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